Growth of Zinc Oxide Nanopores by Pulsed Laser Ablation

Abstract

ZnO thin films of porous structure with strong
c-axis orientation were deposited on n-type silicon
substrate by pulsed laser ablation of ZnO target in low O2
pressure (around 0.03 mbar) and at 6000C substrate
temperature. We attribute the formation of nanopores and
the crater-like formation to the high kinetic energy of the
ablated particles. Photoluminescence spectra show the
near band edge emission (UV emission) and the defect
related emissions in the visible region (blue-green and
yellow emission). Raman spectrum of the nanostructures
reveals the highly intense E1(LO) mode and this mode is
associated with the defect states in ZnO.