Electrical and Optical Characterisation of 100 MeV 197Au Irradiated GaAs

V V Bhide, B D Sutar, K V Sukhatankar ., D Kanjilal ., A M Narasale .

Abstract


Effect of 100 MeV 197Au implantation, followed
by Rapid Thermal Annealing on electrical and optical
characteristic is reported. Single crystal n+ GaAs
substrates of <100> orientation have been implanted at
room temperature with 197Au ions to the doses of 1X1012,
1X1013, 1X1014 ions/cm2. The as-implanted current-voltage
(I-V) characteristic of samples is studied and the optical
investigations in IR and mid IR-range have been made.
The implanted samples were isochronally annealed by
RTA system at different temperatures and the room
temperature electrical characterization and the optical
investigations are reported.


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