Electrical and Optical Characterisation of 100 MeV 197Au Irradiated GaAs
Abstract
Effect of 100 MeV 197Au implantation, followed
by Rapid Thermal Annealing on electrical and optical
characteristic is reported. Single crystal n+ GaAs
substrates of <100> orientation have been implanted at
room temperature with 197Au ions to the doses of 1X1012,
1X1013, 1X1014 ions/cm2. The as-implanted current-voltage
(I-V) characteristic of samples is studied and the optical
investigations in IR and mid IR-range have been made.
The implanted samples were isochronally annealed by
RTA system at different temperatures and the room
temperature electrical characterization and the optical
investigations are reported.
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