Growth of Zinc Oxide Nanopores by Pulsed Laser Ablation

Abstract

ZnO thin films of porous structure with strong c-axis orientation were deposited on n-type silicon substrate by pulsed laser ablation of ZnO target in low O2 pressure (around 0.03 mbar) and at 6000C substrate temperature. We attribute the formation of nanopores and the crater-like formation to the high kinetic energy of the ablated particles. Photoluminescence spectra show the near band edge emission (UV emission) and the defect related emissions in the visible region (blue-green and yellow emission). Raman spectrum of the nanostructures reveals the highly intense E1(LO) mode and this mode is associated with the defect states in ZnO.